SI7900AEDN-T1-GE3 - MOSFET 2N-CH 20V 6A PPAK 1212-8

Tillverkarens varunummer

SI7900AEDN-T1-GE3

Intern artikelnummer

ABC-SI7900AEDN-T1-GE3

Tillverkare

Vishay Siliconix

Kort beskrivning

MOSFET 2N-CH 20V 6A PPAK 1212-8

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

1174040 Pieces

Referens pris

~~USD 0.2788~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har SI7900AEDN-T1-GE3 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för SI7900AEDN-T1-GE3

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : SI7900AEDN-T1-GE3

Tillverkare : Vishay Siliconix

Beskrivning : MOSFET 2N-CH 20V 6A PPAK 1212-8

Serier : TrenchFET®

Delstatus : Active

FET-typ : 2 N-Channel (Dual) Common Drain

FET-funktionen : Logic Level Gate

Avlopp till källspänning (Vdss) : 20V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 6A

Rds On (Max) @ Id, Vgs : 26 mOhm @ 8.5A, 4.5V

Vgs (th) (Max) @ Id : 900mV @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 16nC @ 4.5V

Inputkapacitans (Ciss) (Max) @ Vds : -

Effekt - Max : 1.5W

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Förpackning / fodral : PowerPAK® 1212-8 Dual

Leverantörs Device Package : PowerPAK® 1212-8 Dual

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : SI790 , SI7900AE

dokument för SI7900AEDN-T1-GE3

Datablad : SI7900AEDN-T1-GE3.pdf

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