DMT6007LFGQ-7 - MOSFET BVDSS 41V-60V POWERDI333

Tillverkarens varunummer

DMT6007LFGQ-7

Intern artikelnummer

ABC-DMT6007LFGQ-7

Tillverkare

Diodes Incorporated

Kort beskrivning

MOSFET BVDSS 41V-60V POWERDI333

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

1282764 Pieces

Referens pris

~~USD 0.25517~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har DMT6007LFGQ-7 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för DMT6007LFGQ-7

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : DMT6007LFGQ-7

Tillverkare : Diodes Incorporated

Beskrivning : MOSFET BVDSS 41V-60V POWERDI333

Serier : Automotive, AEC-Q101

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 60V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 15A (Ta), 80A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 6 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 41.3nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 2090pF @ 30V

FET-funktionen : -

Effektdissipation (Max) : 2.2W (Ta), 62.5W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : PowerDI3333-8

Förpackning / fodral : 8-PowerVDFN

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : DMT6 , DMT600

dokument för DMT6007LFGQ-7

Datablad : DMT6007LFGQ-7.pdf

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