RN2712JE(TE85L,F) - TRANS 2PNP PREBIAS 0.1W ESV

Tillverkarens varunummer

RN2712JE(TE85L,F)

Intern artikelnummer

ABC-RN2712JE(TE85L,F)

Tillverkare

Toshiba Semiconductor and Storage

Kort beskrivning

TRANS 2PNP PREBIAS 0.1W ESV

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

7422324 Pieces

Referens pris

~~USD 0.0441~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har RN2712JE(TE85L,F) i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för RN2712JE(TE85L,F)

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : RN2712JE(TE85L,F)

Tillverkare : Toshiba Semiconductor and Storage

Beskrivning : TRANS 2PNP PREBIAS 0.1W ESV

Serier : -

Delstatus : Active

Transistortyp : 2 PNP - Pre-Biased (Dual) (Emitter Coupled)

Nuvarande - Samlare (Ic) (Max) : 100mA

Spänning - Samlare Emitter Breakdown (Max) : 50V

Motstånd - Bas (R1) : 22 kOhms

Motstånd - Emitterbas (R2) : -

Likströmsstigning (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V

Vce Mättnad (Max) @ Ib, Ic : 300mV @ 250µA, 5mA

Nuvarande - Collector Cutoff (Max) : 100nA (ICBO)

Frekvens - Övergång : 200MHz

Effekt - Max : 100mW

Monteringstyp : Surface Mount

Förpackning / fodral : SOT-553

Leverantörs Device Package : ESV

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : RN271 , RN2712JE

dokument för RN2712JE(TE85L,F)

Datablad : RN2712JE(TE85L,F).pdf

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