IXTH1N200P3 - MOSFET N-CH 2000V 1A TO-247

Tillverkarens varunummer

IXTH1N200P3

Intern artikelnummer

ABC-IXTH1N200P3

Tillverkare

IXYS

Kort beskrivning

MOSFET N-CH 2000V 1A TO-247

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

118184 Pieces

Referens pris

~~USD 3.165~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har IXTH1N200P3 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för IXTH1N200P3

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : IXTH1N200P3

Tillverkare : IXYS

Beskrivning : MOSFET N-CH 2000V 1A TO-247

Serier : -

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 2000V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 1A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 40 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 23.5nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 646pF @ 25V

FET-funktionen : -

Effektdissipation (Max) : 125W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Through Hole

Leverantörs Device Package : TO-247 (IXTH)

Förpackning / fodral : TO-247-3

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : IXT , IXTH1

dokument för IXTH1N200P3

Datablad : IXTH1N200P3.pdf

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