SI4425DDY-T1-GE3 - MOSFET P-CH 30V 19.7A 8-SOIC

Tillverkarens varunummer

SI4425DDY-T1-GE3

Intern artikelnummer

ABC-SI4425DDY-T1-GE3

Tillverkare

Vishay Siliconix

Kort beskrivning

MOSFET P-CH 30V 19.7A 8-SOIC

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

1784503 Pieces

Referens pris

~~USD 0.183425~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har SI4425DDY-T1-GE3 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för SI4425DDY-T1-GE3

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : SI4425DDY-T1-GE3

Tillverkare : Vishay Siliconix

Beskrivning : MOSFET P-CH 30V 19.7A 8-SOIC

Serier : TrenchFET®

Delstatus : Active

FET-typ : P-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 30V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 19.7A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 9.8 mOhm @ 13A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 80nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 2610pF @ 15V

FET-funktionen : -

Effektdissipation (Max) : 2.5W (Ta), 5.7W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : 8-SO

Förpackning / fodral : 8-SOIC (0.154", 3.90mm Width)

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : SI442 , SI4425DD

dokument för SI4425DDY-T1-GE3

Datablad : SI4425DDY-T1-GE3.pdf

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