FDI047AN08A0 - MOSFET N-CH 75V 80A TO-262AB

Tillverkarens varunummer

FDI047AN08A0

Intern artikelnummer

ABC-FDI047AN08A0

Tillverkare

ON Semiconductor

Kort beskrivning

MOSFET N-CH 75V 80A TO-262AB

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

104080 Pieces

Referens pris

~~USD 0~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har FDI047AN08A0 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för FDI047AN08A0

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : FDI047AN08A0

Tillverkare : ON Semiconductor

Beskrivning : MOSFET N-CH 75V 80A TO-262AB

Serier : PowerTrench®

Delstatus : Obsolete

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 75V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 80A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 6V, 10V

Rds On (Max) @ Id, Vgs : 4.7 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 138nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 6600pF @ 25V

FET-funktionen : -

Effektdissipation (Max) : 310W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstyp : Through Hole

Leverantörs Device Package : I2PAK (TO-262)

Förpackning / fodral : TO-262-3 Long Leads, I²Pak, TO-262AA

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : FDI0 , FDI047

dokument för FDI047AN08A0

Datablad : FDI047AN08A0.pdf

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