NTMD6601NR2G - MOSFET 2N-CH 80V 1.1A 8SOIC

Tillverkarens varunummer

NTMD6601NR2G

Intern artikelnummer

ABC-NTMD6601NR2G

Tillverkare

ON Semiconductor

Kort beskrivning

MOSFET 2N-CH 80V 1.1A 8SOIC

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

53911 Pieces

Referens pris

~~USD 0~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har NTMD6601NR2G i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för NTMD6601NR2G

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : NTMD6601NR2G

Tillverkare : ON Semiconductor

Beskrivning : MOSFET 2N-CH 80V 1.1A 8SOIC

Serier : -

Delstatus : Obsolete

FET-typ : 2 N-Channel (Dual)

FET-funktionen : Logic Level Gate

Avlopp till källspänning (Vdss) : 80V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 1.1A

Rds On (Max) @ Id, Vgs : 215 mOhm @ 2.2A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 15nC @ 10V

Inputkapacitans (Ciss) (Max) @ Vds : 400pF @ 25V

Effekt - Max : 600mW

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Förpackning / fodral : 8-SOIC (0.154", 3.90mm Width)

Leverantörs Device Package : 8-SOIC

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : NTMD , NTMD66

dokument för NTMD6601NR2G

Datablad : NTMD6601NR2G.pdf

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