DMN2320UFB4-7B - MOSFET N-CH 20V X2-DFN1006-3

Tillverkarens varunummer

DMN2320UFB4-7B

Intern artikelnummer

ABC-DMN2320UFB4-7B

Tillverkare

Diodes Incorporated

Kort beskrivning

MOSFET N-CH 20V X2-DFN1006-3

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

4408404 Pieces

Referens pris

~~USD 0.07425~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har DMN2320UFB4-7B i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för DMN2320UFB4-7B

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : DMN2320UFB4-7B

Tillverkare : Diodes Incorporated

Beskrivning : MOSFET N-CH 20V X2-DFN1006-3

Serier : -

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 20V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 1A (Ta)

Drivspänning (Max Rds På, Min Rds På) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 320 mOhm @ 500mA, 4.5V

Vgs (th) (Max) @ Id : 950mV @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 0.89nC @ 4.5V

Vgs (Max) : ±8V

Inputkapacitans (Ciss) (Max) @ Vds : 71pF @ 10V

FET-funktionen : -

Effektdissipation (Max) : 520mW (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : X2-DFN1006-3

Förpackning / fodral : 3-XFDFN

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : DMN2 , DMN2320

dokument för DMN2320UFB4-7B

Datablad : DMN2320UFB4-7B.pdf

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