TK39N60W,S1VF - MOSFET N CH 600V 38.8A TO247

Tillverkarens varunummer

TK39N60W,S1VF

Intern artikelnummer

ABC-TK39N60W,S1VF

Tillverkare

Toshiba Semiconductor and Storage

Kort beskrivning

MOSFET N CH 600V 38.8A TO247

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

80919 Pieces

Referens pris

~~USD 5.2~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har TK39N60W,S1VF i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för TK39N60W,S1VF

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : TK39N60W,S1VF

Tillverkare : Toshiba Semiconductor and Storage

Beskrivning : MOSFET N CH 600V 38.8A TO247

Serier : DTMOSIV

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 600V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 38.8A (Ta)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 65 mOhm @ 19.4A, 10V

Vgs (th) (Max) @ Id : 3.7V @ 1.9mA

Gate Laddning (Qg) (Max) @ Vgs : 110nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 4100pF @ 300V

FET-funktionen : Super Junction

Effektdissipation (Max) : 270W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstyp : Through Hole

Leverantörs Device Package : TO-247

Förpackning / fodral : TO-247-3

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : TK39 , TK39N6

dokument för TK39N60W,S1VF

Datablad : TK39N60W,S1VF.pdf

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