TPH2R506PL,L1Q - X35 PB-F POWER MOSFET TRANSISTOR

Tillverkarens varunummer

TPH2R506PL,L1Q

Intern artikelnummer

ABC-TPH2R506PL,L1Q

Tillverkare

Toshiba Semiconductor and Storage

Kort beskrivning

X35 PB-F POWER MOSFET TRANSISTOR

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

682626 Pieces

Referens pris

~~USD 0.4795~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har TPH2R506PL,L1Q i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för TPH2R506PL,L1Q

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : TPH2R506PL,L1Q

Tillverkare : Toshiba Semiconductor and Storage

Beskrivning : X35 PB-F POWER MOSFET TRANSISTOR

Serier : U-MOSIX-H

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 60V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 100A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 30A, 4.5V

Vgs (th) (Max) @ Id : 2.5V @ 500µA

Gate Laddning (Qg) (Max) @ Vgs : 60nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 5435pF @ 30V

FET-funktionen : -

Effektdissipation (Max) : 132W (Tc)

Driftstemperatur : 175°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : 8-SOP Advance (5x5)

Förpackning / fodral : 8-PowerVDFN

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : TPH2 , TPH2R50

dokument för TPH2R506PL,L1Q

Datablad : TPH2R506PL,L1Q.pdf

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