RS1E200BNTB - MOSFET N-CH 30V 20A 8HSOP

Tillverkarens varunummer

RS1E200BNTB

Intern artikelnummer

ABC-RS1E200BNTB

Tillverkare

Rohm Semiconductor

Kort beskrivning

MOSFET N-CH 30V 20A 8HSOP

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

3461920 Pieces

Referens pris

~~USD 0.09455~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har RS1E200BNTB i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för RS1E200BNTB

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : RS1E200BNTB

Tillverkare : Rohm Semiconductor

Beskrivning : MOSFET N-CH 30V 20A 8HSOP

Serier : -

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 30V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 20A (Ta)

Drivspänning (Max Rds På, Min Rds På) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 3.9 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Gate Laddning (Qg) (Max) @ Vgs : 59nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 3100pF @ 15V

FET-funktionen : -

Effektdissipation (Max) : 3W (Ta), 25W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : 8-HSOP

Förpackning / fodral : 8-PowerTDFN

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : RS1 , RS1E2

dokument för RS1E200BNTB

Datablad : RS1E200BNTB.pdf

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