RN1962FE(TE85L,F) - TRANS 2NPN PREBIAS 0.1W ES6

Tillverkarens varunummer

RN1962FE(TE85L,F)

Intern artikelnummer

ABC-RN1962FE(TE85L,F)

Tillverkare

Toshiba Semiconductor and Storage

Kort beskrivning

TRANS 2NPN PREBIAS 0.1W ES6

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

57889 Pieces

Referens pris

~~USD 0~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har RN1962FE(TE85L,F) i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för RN1962FE(TE85L,F)

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : RN1962FE(TE85L,F)

Tillverkare : Toshiba Semiconductor and Storage

Beskrivning : TRANS 2NPN PREBIAS 0.1W ES6

Serier : -

Delstatus : Obsolete

Transistortyp : 2 NPN - Pre-Biased (Dual)

Nuvarande - Samlare (Ic) (Max) : 100mA

Spänning - Samlare Emitter Breakdown (Max) : 50V

Motstånd - Bas (R1) : 10 kOhms

Motstånd - Emitterbas (R2) : 10 kOhms

Likströmsstigning (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V

Vce Mättnad (Max) @ Ib, Ic : 300mV @ 250µA, 5mA

Nuvarande - Collector Cutoff (Max) : 100nA (ICBO)

Frekvens - Övergång : 250MHz

Effekt - Max : 100mW

Monteringstyp : Surface Mount

Förpackning / fodral : SOT-563, SOT-666

Leverantörs Device Package : ES6

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : RN196 , RN1962FE

dokument för RN1962FE(TE85L,F)

Datablad : RN1962FE(TE85L,F).pdf

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