GA10SICP12-263 - TRANS SJT 1200V 25A TO263-7

Tillverkarens varunummer

GA10SICP12-263

Intern artikelnummer

ABC-GA10SICP12-263

Tillverkare

GeneSiC Semiconductor

Kort beskrivning

TRANS SJT 1200V 25A TO263-7

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

43537 Pieces

Referens pris

~~USD 13.9587~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har GA10SICP12-263 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för GA10SICP12-263

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : GA10SICP12-263

Tillverkare : GeneSiC Semiconductor

Beskrivning : TRANS SJT 1200V 25A TO263-7

Serier : -

Delstatus : Active

FET-typ : -

Teknologi : SiC (Silicon Carbide Junction Transistor)

Avlopp till källspänning (Vdss) : 1200V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 25A (Tc)

Drivspänning (Max Rds På, Min Rds På) : -

Rds On (Max) @ Id, Vgs : 100 mOhm @ 10A

Vgs (th) (Max) @ Id : -

Gate Laddning (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Inputkapacitans (Ciss) (Max) @ Vds : 1403pF @ 800V

FET-funktionen : -

Effektdissipation (Max) : 170W (Tc)

Driftstemperatur : 175°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : D2PAK (7-Lead)

Förpackning / fodral : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : GA10 , GA10SIC

dokument för GA10SICP12-263

Datablad : GA10SICP12-263.pdf

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