SQ2315ES-T1_GE3 - MOSFET P-CHAN 12V SOT23

Tillverkarens varunummer

SQ2315ES-T1_GE3

Intern artikelnummer

ABC-SQ2315ES-T1_GE3

Tillverkare

Vishay Siliconix

Kort beskrivning

MOSFET P-CHAN 12V SOT23

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

3022383 Pieces

Referens pris

~~USD 0.1083~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har SQ2315ES-T1_GE3 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för SQ2315ES-T1_GE3

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : SQ2315ES-T1_GE3

Tillverkare : Vishay Siliconix

Beskrivning : MOSFET P-CHAN 12V SOT23

Serier : Automotive, AEC-Q101, TrenchFET®

Delstatus : Active

FET-typ : P-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 12V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 5A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 50 mOhm @ 3.5A, 10V

Vgs (th) (Max) @ Id : 1V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 13nC @ 4.5V

Vgs (Max) : ±8V

Inputkapacitans (Ciss) (Max) @ Vds : 870pF @ 4V

FET-funktionen : -

Effektdissipation (Max) : 2W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : SOT-23-3 (TO-236)

Förpackning / fodral : TO-236-3, SC-59, SOT-23-3

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : SQ231 , SQ2315E

dokument för SQ2315ES-T1_GE3

Datablad : SQ2315ES-T1_GE3.pdf

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