VS-GB100TP120N - IGBT 1200V 200A 650W INT-A-PAK

Tillverkarens varunummer

VS-GB100TP120N

Intern artikelnummer

ABC-VS-GB100TP120N

Tillverkare

Vishay Semiconductor Diodes Division

Kort beskrivning

IGBT 1200V 200A 650W INT-A-PAK

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

44931 Pieces

Referens pris

~~USD 52.96104~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har VS-GB100TP120N i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för VS-GB100TP120N

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : VS-GB100TP120N

Tillverkare : Vishay Semiconductor Diodes Division

Beskrivning : IGBT 1200V 200A 650W INT-A-PAK

Serier : -

Delstatus : Active

IGBT-typ : -

Konfiguration : Half Bridge

Spänning - Samlare Emitter Breakdown (Max) : 1200V

Nuvarande - Samlare (Ic) (Max) : 200A

Effekt - Max : 650W

Vce (på) (Max) @ Vge, Ic : 2.2V @ 15V, 100A

Nuvarande - Collector Cutoff (Max) : 5mA

Inputkapacitans (Cies) @ Vce : 7.43nF @ 25V

Inmatning : Standard

NTC-termistor : No

Driftstemperatur : 150°C (TJ)

Monteringstyp : Chassis Mount

Förpackning / fodral : INT-A-Pak

Leverantörs Device Package : INT-A-PAK

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : VS-G , VS-GB10

dokument för VS-GB100TP120N

Datablad : VS-GB100TP120N.pdf

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