SIR112DP-T1-RE3 - MOSFET N-CHAN 40V

Tillverkarens varunummer

SIR112DP-T1-RE3

Intern artikelnummer

ABC-SIR112DP-T1-RE3

Tillverkare

Vishay Siliconix

Kort beskrivning

MOSFET N-CHAN 40V

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

1002197 Pieces

Referens pris

~~USD 0.326605~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har SIR112DP-T1-RE3 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för SIR112DP-T1-RE3

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : SIR112DP-T1-RE3

Tillverkare : Vishay Siliconix

Beskrivning : MOSFET N-CHAN 40V

Serier : TrenchFET® Gen IV

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 40V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 37.6A (Ta), 133A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 1.96 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.4V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 89nC @ 10V

Vgs (Max) : +20V, -16V

Inputkapacitans (Ciss) (Max) @ Vds : 4270pF @ 20V

FET-funktionen : -

Effektdissipation (Max) : 5W (Ta), 62.5W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : PowerPAK® SO-8

Förpackning / fodral : PowerPAK® SO-8

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : SIR11 , SIR112D

dokument för SIR112DP-T1-RE3

Datablad : SIR112DP-T1-RE3.pdf

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