DGD2106S8-13 - IC GATE DRVR HALF-BRIDGE 8SO

Tillverkarens varunummer

DGD2106S8-13

Intern artikelnummer

ABC-DGD2106S8-13

Tillverkare

Diodes Incorporated

Kort beskrivning

IC GATE DRVR HALF-BRIDGE 8SO

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

626129 Pieces

Referens pris

~~USD 0.58125~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har DGD2106S8-13 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för DGD2106S8-13

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : DGD2106S8-13

Tillverkare : Diodes Incorporated

Beskrivning : IC GATE DRVR HALF-BRIDGE 8SO

Serier : -

Delstatus : Not For New Designs

Driven konfiguration : Half-Bridge

Kanaltyp : Independent

Antal drivrutiner : 2

Gate Type : IGBT, N-Channel MOSFET

Spänning - Tillförsel : 10V ~ 20V

Logisk spänning - VIL, VIH : 0.6V, 2.5V

Aktuell - Peak Output (Källa, Sink) : 290mA, 600mA

Inmatningstyp : Non-Inverting

Högsidans spänning - Max (Bootstrap) : 600V

Rise / Fall Time (Typ) : 100ns, 35ns

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Förpackning / fodral : 8-SOIC (0.154", 3.90mm Width)

Leverantörs Device Package : 8-SO

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : DGD2 , DGD210

dokument för DGD2106S8-13

Datablad : DGD2106S8-13.pdf

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