SIDR140DP-T1-GE3 - MOSFET N-CHAN 25V PPAK SO-8DC

Tillverkarens varunummer

SIDR140DP-T1-GE3

Intern artikelnummer

ABC-SIDR140DP-T1-GE3

Tillverkare

Vishay Siliconix

Kort beskrivning

MOSFET N-CHAN 25V PPAK SO-8DC

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

518546 Pieces

Referens pris

~~USD 0.631225~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har SIDR140DP-T1-GE3 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för SIDR140DP-T1-GE3

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : SIDR140DP-T1-GE3

Tillverkare : Vishay Siliconix

Beskrivning : MOSFET N-CHAN 25V PPAK SO-8DC

Serier : TrenchFET® Gen IV

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 25V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 79A (Ta), 100A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 0.67 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 170nC @ 10V

Vgs (Max) : +20V, -16V

Inputkapacitans (Ciss) (Max) @ Vds : 8150pF @ 10V

FET-funktionen : -

Effektdissipation (Max) : 6.25W (Ta), 125W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : PowerPAK® SO-8DC

Förpackning / fodral : PowerPAK® SO-8

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : SIDR1 , SIDR140D

dokument för SIDR140DP-T1-GE3

Datablad : SIDR140DP-T1-GE3.pdf

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