FQD12N20TM_F080 - MOSFET N-CH 200V 9A DPAK

Tillverkarens varunummer

FQD12N20TM_F080

Intern artikelnummer

ABC-FQD12N20TM_F080

Tillverkare

ON Semiconductor

Kort beskrivning

MOSFET N-CH 200V 9A DPAK

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

46563 Pieces

Referens pris

~~USD 0~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har FQD12N20TM_F080 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för FQD12N20TM_F080

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : FQD12N20TM_F080

Tillverkare : ON Semiconductor

Beskrivning : MOSFET N-CH 200V 9A DPAK

Serier : QFET®

Delstatus : Obsolete

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 200V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 9A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 280 mOhm @ 4.5A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 23nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 910pF @ 25V

FET-funktionen : -

Effektdissipation (Max) : 2.5W (Ta), 55W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : D-Pak

Förpackning / fodral : TO-252-3, DPak (2 Leads + Tab), SC-63

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : FQD12 , FQD12N2

dokument för FQD12N20TM_F080

Datablad : FQD12N20TM_F080.pdf

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