TK10A80W,S4X - MOSFET N-CH 800V 9.5A TO220SIS

Tillverkarens varunummer

TK10A80W,S4X

Intern artikelnummer

ABC-TK10A80W,S4X

Tillverkare

Toshiba Semiconductor and Storage

Kort beskrivning

MOSFET N-CH 800V 9.5A TO220SIS

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

228893 Pieces

Referens pris

~~USD 1.43~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har TK10A80W,S4X i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för TK10A80W,S4X

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : TK10A80W,S4X

Tillverkare : Toshiba Semiconductor and Storage

Beskrivning : MOSFET N-CH 800V 9.5A TO220SIS

Serier : DTMOSIV

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 800V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 9.5A (Ta)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 550 mOhm @ 4.8A, 10V

Vgs (th) (Max) @ Id : 4V @ 450µA

Gate Laddning (Qg) (Max) @ Vgs : 19nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1150pF @ 300V

FET-funktionen : -

Effektdissipation (Max) : 40W (Tc)

Driftstemperatur : 150°C

Monteringstyp : Through Hole

Leverantörs Device Package : TO-220SIS

Förpackning / fodral : TO-220-3 Full Pack

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : TK10 , TK10A8

dokument för TK10A80W,S4X

Datablad : TK10A80W,S4X.pdf

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