SIA429DJT-T1-GE3 - MOSFET P-CH 20V 12A SC-70

Tillverkarens varunummer

SIA429DJT-T1-GE3

Intern artikelnummer

ABC-SIA429DJT-T1-GE3

Tillverkare

Vishay Siliconix

Kort beskrivning

MOSFET P-CH 20V 12A SC-70

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

2686509 Pieces

Referens pris

~~USD 0.12184~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har SIA429DJT-T1-GE3 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för SIA429DJT-T1-GE3

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : SIA429DJT-T1-GE3

Tillverkare : Vishay Siliconix

Beskrivning : MOSFET P-CH 20V 12A SC-70

Serier : TrenchFET®

Delstatus : Active

FET-typ : P-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 20V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 12A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 1.5V, 4.5V

Rds On (Max) @ Id, Vgs : 20.5 mOhm @ 6A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 62nC @ 8V

Vgs (Max) : ±8V

Inputkapacitans (Ciss) (Max) @ Vds : 1750pF @ 10V

FET-funktionen : -

Effektdissipation (Max) : 3.5W (Ta), 19W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : PowerPAK® SC-70-6 Single

Förpackning / fodral : PowerPAK® SC-70-6

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : SIA42 , SIA429DJ

dokument för SIA429DJT-T1-GE3

Datablad : SIA429DJT-T1-GE3.pdf

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