BSM25GD120DN2BOSA1 - IGBT 2 LOW POWER ECONO2-2

Tillverkarens varunummer

BSM25GD120DN2BOSA1

Intern artikelnummer

ABC-BSM25GD120DN2BOSA1

Tillverkare

Infineon Technologies

Kort beskrivning

IGBT 2 LOW POWER ECONO2-2

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

32640 Pieces

Referens pris

~~USD 45.7865~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har BSM25GD120DN2BOSA1 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för BSM25GD120DN2BOSA1

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : BSM25GD120DN2BOSA1

Tillverkare : Infineon Technologies

Beskrivning : IGBT 2 LOW POWER ECONO2-2

Serier : -

Delstatus : Not For New Designs

IGBT-typ : -

Konfiguration : Full Bridge

Spänning - Samlare Emitter Breakdown (Max) : 1200V

Nuvarande - Samlare (Ic) (Max) : 35A

Effekt - Max : 200W

Vce (på) (Max) @ Vge, Ic : 3V @ 15V, 25A

Nuvarande - Collector Cutoff (Max) : 800µA

Inputkapacitans (Cies) @ Vce : 1.65nF @ 25V

Inmatning : Standard

NTC-termistor : No

Driftstemperatur : 150°C (TJ)

Monteringstyp : Chassis Mount

Förpackning / fodral : Module

Leverantörs Device Package : Module

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : BSM25G , BSM25GD12

dokument för BSM25GD120DN2BOSA1

Datablad : BSM25GD120DN2BOSA1.pdf

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