APTM100A13DG - MOSFET 2N-CH 1000V 65A SP6

Tillverkarens varunummer

APTM100A13DG

Intern artikelnummer

ABC-APTM100A13DG

Tillverkare

Microsemi Corporation

Kort beskrivning

MOSFET 2N-CH 1000V 65A SP6

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

30090 Pieces

Referens pris

~~USD 79.04285~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har APTM100A13DG i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för APTM100A13DG

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : APTM100A13DG

Tillverkare : Microsemi Corporation

Beskrivning : MOSFET 2N-CH 1000V 65A SP6

Serier : -

Delstatus : Active

FET-typ : 2 N-Channel (Half Bridge)

FET-funktionen : Standard

Avlopp till källspänning (Vdss) : 1000V (1kV)

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 65A

Rds On (Max) @ Id, Vgs : 156 mOhm @ 32.5A, 10V

Vgs (th) (Max) @ Id : 5V @ 6mA

Gate Laddning (Qg) (Max) @ Vgs : 562nC @ 10V

Inputkapacitans (Ciss) (Max) @ Vds : 15200pF @ 25V

Effekt - Max : 1250W

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstyp : Chassis Mount

Förpackning / fodral : SP6

Leverantörs Device Package : SP6

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : APTM , APTM10

dokument för APTM100A13DG

Datablad : APTM100A13DG.pdf

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