STH315N10F7-2 - MOSFET N-CH 100V 180A H2PAK-2

Tillverkarens varunummer

STH315N10F7-2

Intern artikelnummer

ABC-STH315N10F7-2

Tillverkare

STMicroelectronics

Kort beskrivning

MOSFET N-CH 100V 180A H2PAK-2

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

210136 Pieces

Referens pris

~~USD 1.78017~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har STH315N10F7-2 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för STH315N10F7-2

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : STH315N10F7-2

Tillverkare : STMicroelectronics

Beskrivning : MOSFET N-CH 100V 180A H2PAK-2

Serier : Automotive, AEC-Q101, DeepGATE™, STripFET™ VII

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 100V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 180A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 2.3 mOhm @ 60A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 180nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 12800pF @ 25V

FET-funktionen : -

Effektdissipation (Max) : 315W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : H2Pak-2

Förpackning / fodral : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : STH3 , STH315

dokument för STH315N10F7-2

Datablad : STH315N10F7-2.pdf

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