NVMFSW6D1N08HT1G - T8 80V 1 PART PROLIFERATI

Tillverkarens varunummer

NVMFSW6D1N08HT1G

Intern artikelnummer

ABC-NVMFSW6D1N08HT1G

Tillverkare

ON Semiconductor

Kort beskrivning

T8 80V 1 PART PROLIFERATI

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

880117 Pieces

Referens pris

~~USD 0.37191~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har NVMFSW6D1N08HT1G i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för NVMFSW6D1N08HT1G

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : NVMFSW6D1N08HT1G

Tillverkare : ON Semiconductor

Beskrivning : T8 80V 1 PART PROLIFERATI

Serier : Automotive, AEC-Q101

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 80V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 17A (Ta), 89A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 4V @ 120µA

Gate Laddning (Qg) (Max) @ Vgs : 32nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 2085pF @ 40V

FET-funktionen : -

Effektdissipation (Max) : 3.8W (Ta), 104W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : 5-DFN (5x6) (8-SOFL)

Förpackning / fodral : 8-PowerTDFN, 5 Leads

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : NVMFS , NVMFSW6D

dokument för NVMFSW6D1N08HT1G

Datablad : NVMFSW6D1N08HT1G.pdf

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