SI3590DV-T1-GE3 - MOSFET N/P-CH 30V 2.5A 6-TSOP

Tillverkarens varunummer

SI3590DV-T1-GE3

Intern artikelnummer

ABC-SI3590DV-T1-GE3

Tillverkare

Vishay Siliconix

Kort beskrivning

MOSFET N/P-CH 30V 2.5A 6-TSOP

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

1679230 Pieces

Referens pris

~~USD 0.194925~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har SI3590DV-T1-GE3 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för SI3590DV-T1-GE3

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : SI3590DV-T1-GE3

Tillverkare : Vishay Siliconix

Beskrivning : MOSFET N/P-CH 30V 2.5A 6-TSOP

Serier : TrenchFET®

Delstatus : Active

FET-typ : N and P-Channel

FET-funktionen : Logic Level Gate

Avlopp till källspänning (Vdss) : 30V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 2.5A, 1.7A

Rds On (Max) @ Id, Vgs : 77 mOhm @ 3A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 4.5nC @ 4.5V

Inputkapacitans (Ciss) (Max) @ Vds : -

Effekt - Max : 830mW

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Förpackning / fodral : SOT-23-6 Thin, TSOT-23-6

Leverantörs Device Package : 6-TSOP

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : SI359 , SI3590D

dokument för SI3590DV-T1-GE3

Datablad : SI3590DV-T1-GE3.pdf

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