DMG4N65CTI - MOSFET N-CH 650V 4A ITO-220AB

Tillverkarens varunummer

DMG4N65CTI

Intern artikelnummer

ABC-DMG4N65CTI

Tillverkare

Diodes Incorporated

Kort beskrivning

MOSFET N-CH 650V 4A ITO-220AB

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

533358 Pieces

Referens pris

~~USD 0.6137~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har DMG4N65CTI i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för DMG4N65CTI

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : DMG4N65CTI

Tillverkare : Diodes Incorporated

Beskrivning : MOSFET N-CH 650V 4A ITO-220AB

Serier : -

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 650V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 4A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 3 Ohm @ 2A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 13.5nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 900pF @ 25V

FET-funktionen : -

Effektdissipation (Max) : 8.35W (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Through Hole

Leverantörs Device Package : ITO-220AB

Förpackning / fodral : TO-220-3 Full Pack, Isolated Tab

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : DMG , DMG4N

dokument för DMG4N65CTI

Datablad : DMG4N65CTI.pdf

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