TK16J60W,S1VQ - MOSFET N CH 600V 15.8A TO-3PN

Tillverkarens varunummer

TK16J60W,S1VQ

Intern artikelnummer

ABC-TK16J60W,S1VQ

Tillverkare

Toshiba Semiconductor and Storage

Kort beskrivning

MOSFET N CH 600V 15.8A TO-3PN

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

67200 Pieces

Referens pris

~~USD 0~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har TK16J60W,S1VQ i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för TK16J60W,S1VQ

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : TK16J60W,S1VQ

Tillverkare : Toshiba Semiconductor and Storage

Beskrivning : MOSFET N CH 600V 15.8A TO-3PN

Serier : DTMOSIV

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 600V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 15.8A (Ta)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 190 mOhm @ 7.9A, 10V

Vgs (th) (Max) @ Id : 3.7V @ 790µA

Gate Laddning (Qg) (Max) @ Vgs : 38nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 1350pF @ 300V

FET-funktionen : Super Junction

Effektdissipation (Max) : 130W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstyp : Through Hole

Leverantörs Device Package : TO-3P(N)

Förpackning / fodral : TO-3P-3, SC-65-3

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : TK16 , TK16J6

dokument för TK16J60W,S1VQ

Datablad : TK16J60W,S1VQ.pdf

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