APT11N80BC3G - MOSFET N-CH 800V 11A TO-247

Tillverkarens varunummer

APT11N80BC3G

Intern artikelnummer

ABC-APT11N80BC3G

Tillverkare

Microsemi Corporation

Kort beskrivning

MOSFET N-CH 800V 11A TO-247

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

123648 Pieces

Referens pris

~~USD 3.025~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har APT11N80BC3G i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för APT11N80BC3G

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : APT11N80BC3G

Tillverkare : Microsemi Corporation

Beskrivning : MOSFET N-CH 800V 11A TO-247

Serier : -

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 800V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 11A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 450 mOhm @ 7.1A, 10V

Vgs (th) (Max) @ Id : 3.9V @ 680µA

Gate Laddning (Qg) (Max) @ Vgs : 60nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1585pF @ 25V

FET-funktionen : -

Effektdissipation (Max) : 156W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Through Hole

Leverantörs Device Package : TO-247 [B]

Förpackning / fodral : TO-247-3

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : APT1 , APT11N

dokument för APT11N80BC3G

Datablad : APT11N80BC3G.pdf

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