SIHB100N60E-GE3 - MOSFET E SERIES 600V D2PAK TO-2

Tillverkarens varunummer

SIHB100N60E-GE3

Intern artikelnummer

ABC-SIHB100N60E-GE3

Tillverkare

Vishay Siliconix

Kort beskrivning

MOSFET E SERIES 600V D2PAK TO-2

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

129208 Pieces

Referens pris

~~USD 2.895~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har SIHB100N60E-GE3 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för SIHB100N60E-GE3

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : SIHB100N60E-GE3

Tillverkare : Vishay Siliconix

Beskrivning : MOSFET E SERIES 600V D2PAK TO-2

Serier : E

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 600V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 30A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 100 mOhm @ 13A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 50nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 1851pF @ 100V

FET-funktionen : -

Effektdissipation (Max) : 208W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : D²PAK (TO-263)

Förpackning / fodral : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : SIHB1 , SIHB100

dokument för SIHB100N60E-GE3

Datablad : SIHB100N60E-GE3.pdf

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