SQD100N02-3M5L_GE3 - MOSFET N-CH 20V 100A TO252AA

Tillverkarens varunummer

SQD100N02-3M5L_GE3

Intern artikelnummer

ABC-SQD100N02-3M5L_GE3

Tillverkare

Vishay Siliconix

Kort beskrivning

MOSFET N-CH 20V 100A TO252AA

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

910847 Pieces

Referens pris

~~USD 0.35936~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har SQD100N02-3M5L_GE3 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för SQD100N02-3M5L_GE3

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : SQD100N02-3M5L_GE3

Tillverkare : Vishay Siliconix

Beskrivning : MOSFET N-CH 20V 100A TO252AA

Serier : Automotive, AEC-Q101, TrenchFET®

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 20V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 100A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 3.5 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 110nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 5500pF @ 10V

FET-funktionen : -

Effektdissipation (Max) : 83W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : TO-252AA

Förpackning / fodral : TO-252-3, DPak (2 Leads + Tab), SC-63

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : SQD100 , SQD100N02

dokument för SQD100N02-3M5L_GE3

Datablad : SQD100N02-3M5L_GE3.pdf

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