TK1K9A60F,S4X - PB-F POWER MOSFET TRANSISTOR TO-

Tillverkarens varunummer

TK1K9A60F,S4X

Intern artikelnummer

ABC-TK1K9A60F,S4X

Tillverkare

Toshiba Semiconductor and Storage

Kort beskrivning

PB-F POWER MOSFET TRANSISTOR TO-

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

719383 Pieces

Referens pris

~~USD 0.455~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har TK1K9A60F,S4X i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för TK1K9A60F,S4X

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : TK1K9A60F,S4X

Tillverkare : Toshiba Semiconductor and Storage

Beskrivning : PB-F POWER MOSFET TRANSISTOR TO-

Serier : U-MOSIX

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 600V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 3.7A (Ta)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 1.9 Ohm @ 1.9A, 10V

Vgs (th) (Max) @ Id : 4V @ 400µA

Gate Laddning (Qg) (Max) @ Vgs : 14nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 490pF @ 300V

FET-funktionen : -

Effektdissipation (Max) : 30W (Tc)

Driftstemperatur : 150°C

Monteringstyp : Through Hole

Leverantörs Device Package : TO-220SIS

Förpackning / fodral : TO-220-3 Full Pack

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : TK1K , TK1K9A

dokument för TK1K9A60F,S4X

Datablad : TK1K9A60F,S4X.pdf

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