APTM120H140FT1G - MOSFET 4N-CH 1200V 8A SP1

Tillverkarens varunummer

APTM120H140FT1G

Intern artikelnummer

ABC-APTM120H140FT1G

Tillverkare

Microsemi Corporation

Kort beskrivning

MOSFET 4N-CH 1200V 8A SP1

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

71904 Pieces

Referens pris

~~USD 20.7927~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har APTM120H140FT1G i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för APTM120H140FT1G

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : APTM120H140FT1G

Tillverkare : Microsemi Corporation

Beskrivning : MOSFET 4N-CH 1200V 8A SP1

Serier : -

Delstatus : Active

FET-typ : 4 N-Channel (H-Bridge)

FET-funktionen : Standard

Avlopp till källspänning (Vdss) : 1200V (1.2kV)

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 8A

Rds On (Max) @ Id, Vgs : 1.68 Ohm @ 7A, 10V

Vgs (th) (Max) @ Id : 5V @ 1mA

Gate Laddning (Qg) (Max) @ Vgs : 145nC @ 10V

Inputkapacitans (Ciss) (Max) @ Vds : 3812pF @ 25V

Effekt - Max : 208W

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstyp : Chassis Mount

Förpackning / fodral : SP1

Leverantörs Device Package : SP1

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : APTM1 , APTM120

dokument för APTM120H140FT1G

Datablad : APTM120H140FT1G.pdf

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