QJD1210010 - MOSFET 2N-CH 1200V 100A SIC

Tillverkarens varunummer

QJD1210010

Intern artikelnummer

ABC-QJD1210010

Tillverkare

Powerex Inc.

Kort beskrivning

MOSFET 2N-CH 1200V 100A SIC

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

52923 Pieces

Referens pris

~~USD 0~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har QJD1210010 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för QJD1210010

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : QJD1210010

Tillverkare : Powerex Inc.

Beskrivning : MOSFET 2N-CH 1200V 100A SIC

Serier : -

Delstatus : Active

FET-typ : 2 N-Channel (Dual)

FET-funktionen : Silicon Carbide (SiC)

Avlopp till källspänning (Vdss) : 1200V (1.2kV)

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 100A (Tc)

Rds On (Max) @ Id, Vgs : 25 mOhm @ 100A, 20V

Vgs (th) (Max) @ Id : 5V @ 10mA

Gate Laddning (Qg) (Max) @ Vgs : 500nC @ 20V

Inputkapacitans (Ciss) (Max) @ Vds : 10200pF @ 800V

Effekt - Max : 1080W

Driftstemperatur : -40°C ~ 175°C (TJ)

Monteringstyp : Chassis Mount

Förpackning / fodral : Module

Leverantörs Device Package : Module

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : QJD , QJD12

dokument för QJD1210010

Datablad : QJD1210010.pdf

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