PHW80NQ10T,127 - MOSFET N-CH 100V 80A SOT429

Tillverkarens varunummer

PHW80NQ10T,127

Intern artikelnummer

ABC-PHW80NQ10T,127

Tillverkare

NXP USA Inc.

Kort beskrivning

MOSFET N-CH 100V 80A SOT429

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

45201 Pieces

Referens pris

~~USD 0~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har PHW80NQ10T,127 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för PHW80NQ10T,127

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : PHW80NQ10T,127

Tillverkare : NXP USA Inc.

Beskrivning : MOSFET N-CH 100V 80A SOT429

Serier : TrenchMOS™

Delstatus : Obsolete

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 100V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 80A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 15 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Gate Laddning (Qg) (Max) @ Vgs : 109nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 4720pF @ 25V

FET-funktionen : -

Effektdissipation (Max) : 263W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstyp : Through Hole

Leverantörs Device Package : TO-247-3

Förpackning / fodral : TO-247-3

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : PHW8 , PHW80NQ

dokument för PHW80NQ10T,127

Datablad : PHW80NQ10T,127.pdf

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