SI4829DY-T1-E3 - MOSFET P-CH 20V 2A 8-SOIC

Tillverkarens varunummer

SI4829DY-T1-E3

Intern artikelnummer

ABC-SI4829DY-T1-E3

Tillverkare

Vishay Siliconix

Kort beskrivning

MOSFET P-CH 20V 2A 8-SOIC

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

2844072 Pieces

Referens pris

~~USD 0.11509~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har SI4829DY-T1-E3 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för SI4829DY-T1-E3

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : SI4829DY-T1-E3

Tillverkare : Vishay Siliconix

Beskrivning : MOSFET P-CH 20V 2A 8-SOIC

Serier : LITTLE FOOT®

Delstatus : Active

FET-typ : P-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 20V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 2A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 215 mOhm @ 2.5A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 8nC @ 10V

Vgs (Max) : ±12V

Inputkapacitans (Ciss) (Max) @ Vds : 210pF @ 10V

FET-funktionen : Schottky Diode (Isolated)

Effektdissipation (Max) : 2W (Ta), 3.1W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : 8-SO

Förpackning / fodral : 8-SOIC (0.154", 3.90mm Width)

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : SI48 , SI4829D

dokument för SI4829DY-T1-E3

Datablad : SI4829DY-T1-E3.pdf

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