TK32E12N1,S1X - MOSFET N CH 120V 60A TO-220

Tillverkarens varunummer

TK32E12N1,S1X

Intern artikelnummer

ABC-TK32E12N1,S1X

Tillverkare

Toshiba Semiconductor and Storage

Kort beskrivning

MOSFET N CH 120V 60A TO-220

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

464282 Pieces

Referens pris

~~USD 0.705~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har TK32E12N1,S1X i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för TK32E12N1,S1X

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : TK32E12N1,S1X

Tillverkare : Toshiba Semiconductor and Storage

Beskrivning : MOSFET N CH 120V 60A TO-220

Serier : U-MOSVIII-H

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 120V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 60A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 13.8 mOhm @ 16A, 10V

Vgs (th) (Max) @ Id : 4V @ 500µA

Gate Laddning (Qg) (Max) @ Vgs : 34nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 2000pF @ 60V

FET-funktionen : -

Effektdissipation (Max) : 98W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstyp : Through Hole

Leverantörs Device Package : TO-220

Förpackning / fodral : TO-220-3

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : TK32 , TK32E1

dokument för TK32E12N1,S1X

Datablad : TK32E12N1,S1X.pdf

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