TK50P03M1(T6RSS-Q) - MOSFET N-CH 30V 50A DP TO252-3

Tillverkarens varunummer

TK50P03M1(T6RSS-Q)

Intern artikelnummer

ABC-TK50P03M1(T6RSS-Q)

Tillverkare

Toshiba Semiconductor and Storage

Kort beskrivning

MOSFET N-CH 30V 50A DP TO252-3

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

1929410 Pieces

Referens pris

~~USD 0.16965~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har TK50P03M1(T6RSS-Q) i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för TK50P03M1(T6RSS-Q)

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : TK50P03M1(T6RSS-Q)

Tillverkare : Toshiba Semiconductor and Storage

Beskrivning : MOSFET N-CH 30V 50A DP TO252-3

Serier : U-MOSVI-H

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 30V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 50A (Ta)

Drivspänning (Max Rds På, Min Rds På) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 7.5 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 2.3V @ 200µA

Gate Laddning (Qg) (Max) @ Vgs : 25.3nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1700pF @ 10V

FET-funktionen : -

Effektdissipation (Max) : 47W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : DP

Förpackning / fodral : TO-252-3, DPak (2 Leads + Tab), SC-63

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : TK50P0 , TK50P03M1

dokument för TK50P03M1(T6RSS-Q)

Datablad : TK50P03M1(T6RSS-Q).pdf

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