EPC2103ENG - GAN TRANS 2N-CH 80V BUMPED DIE

Tillverkarens varunummer

EPC2103ENG

Intern artikelnummer

ABC-EPC2103ENG

Tillverkare

EPC

Kort beskrivning

GAN TRANS 2N-CH 80V BUMPED DIE

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

52897 Pieces

Referens pris

~~USD 0~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har EPC2103ENG i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för EPC2103ENG

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : EPC2103ENG

Tillverkare : EPC

Beskrivning : GAN TRANS 2N-CH 80V BUMPED DIE

Serier : eGaN®

Delstatus : Active

FET-typ : 2 N-Channel (Half Bridge)

FET-funktionen : GaNFET (Gallium Nitride)

Avlopp till källspänning (Vdss) : 80V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 23A

Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 7mA

Gate Laddning (Qg) (Max) @ Vgs : 6.5nC @ 5V

Inputkapacitans (Ciss) (Max) @ Vds : 760pF @ 40V

Effekt - Max : -

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Förpackning / fodral : Die

Leverantörs Device Package : Die

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : EPC , EPC21

dokument för EPC2103ENG

Datablad : EPC2103ENG.pdf

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