SIZ328DT-T1-GE3 - MOSFET DUAL N-CHAN 25V POWERPAIR

Tillverkarens varunummer

SIZ328DT-T1-GE3

Intern artikelnummer

ABC-SIZ328DT-T1-GE3

Tillverkare

Vishay Siliconix

Kort beskrivning

MOSFET DUAL N-CHAN 25V POWERPAIR

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

1609265 Pieces

Referens pris

~~USD 0.2034~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har SIZ328DT-T1-GE3 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för SIZ328DT-T1-GE3

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : SIZ328DT-T1-GE3

Tillverkare : Vishay Siliconix

Beskrivning : MOSFET DUAL N-CHAN 25V POWERPAIR

Serier : TrenchFET® Gen IV

Delstatus : Active

FET-typ : 2 N-Channel (Dual)

FET-funktionen : Standard

Avlopp till källspänning (Vdss) : 25V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)

Rds On (Max) @ Id, Vgs : 15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 6.9nC @ 10V, 11.3nC @ 10V

Inputkapacitans (Ciss) (Max) @ Vds : 325pF @ 10V, 600pF @ 10V

Effekt - Max : 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Förpackning / fodral : 8-PowerWDFN

Leverantörs Device Package : 8-Power33 (3x3)

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : SIZ32 , SIZ328D

dokument för SIZ328DT-T1-GE3

Datablad : SIZ328DT-T1-GE3.pdf

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