STH110N10F7-2 - MOSFET N CH 100V 110A H2PAK

Tillverkarens varunummer

STH110N10F7-2

Intern artikelnummer

ABC-STH110N10F7-2

Tillverkare

STMicroelectronics

Kort beskrivning

MOSFET N CH 100V 110A H2PAK

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

383222 Pieces

Referens pris

~~USD 0.854125~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har STH110N10F7-2 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för STH110N10F7-2

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : STH110N10F7-2

Tillverkare : STMicroelectronics

Beskrivning : MOSFET N CH 100V 110A H2PAK

Serier : DeepGATE™, STripFET™ VII

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 100V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 110A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 55A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 72nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 5117pF @ 50V

FET-funktionen : -

Effektdissipation (Max) : 150W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : H2Pak-2

Förpackning / fodral : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : STH1 , STH110

dokument för STH110N10F7-2

Datablad : STH110N10F7-2.pdf

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