IPG20N10S4L22ATMA1 - MOSFET 2N-CH 8TDSON

Tillverkarens varunummer

IPG20N10S4L22ATMA1

Intern artikelnummer

ABC-IPG20N10S4L22ATMA1

Tillverkare

Infineon Technologies

Kort beskrivning

MOSFET 2N-CH 8TDSON

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

849338 Pieces

Referens pris

~~USD 0.385385~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har IPG20N10S4L22ATMA1 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för IPG20N10S4L22ATMA1

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : IPG20N10S4L22ATMA1

Tillverkare : Infineon Technologies

Beskrivning : MOSFET 2N-CH 8TDSON

Serier : Automotive, AEC-Q101, OptiMOS™

Delstatus : Active

FET-typ : 2 N-Channel (Dual)

FET-funktionen : Logic Level Gate

Avlopp till källspänning (Vdss) : 100V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 20A

Rds On (Max) @ Id, Vgs : 22 mOhm @ 17A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 25µA

Gate Laddning (Qg) (Max) @ Vgs : 27nC @ 10V

Inputkapacitans (Ciss) (Max) @ Vds : 1755pF @ 25V

Effekt - Max : 60W

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstyp : Surface Mount

Förpackning / fodral : 8-PowerVDFN

Leverantörs Device Package : PG-TDSON-8-4

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : IPG20N , IPG20N10S

dokument för IPG20N10S4L22ATMA1

Datablad : IPG20N10S4L22ATMA1.pdf

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