RS1BLHM2G - DIODE GEN PURP 100V 800MA SUBSMA

Tillverkarens varunummer

RS1BLHM2G

Intern artikelnummer

ABC-RS1BLHM2G

Tillverkare

Taiwan Semiconductor Corporation

Kort beskrivning

DIODE GEN PURP 100V 800MA SUBSMA

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

14003199 Pieces

Referens pris

~~USD 0.023375~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har RS1BLHM2G i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för RS1BLHM2G

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : RS1BLHM2G

Tillverkare : Taiwan Semiconductor Corporation

Beskrivning : DIODE GEN PURP 100V 800MA SUBSMA

Serier : Automotive, AEC-Q101

Delstatus : Active

Diodtyp : Standard

Spänning - DC-omvänd (Vr) (Max) : 100V

Aktuell - Genomsnittlig Rectified (Io) : 800mA

Spänning - Framåt (Vf) (Max) @ Om : 1.3V @ 800mA

Fart : Fast Recovery =< 500ns, > 200mA (Io)

Omvänd återställningstid (trr) : 150ns

Ström - Omvänd läckage @ Vr : 5µA @ 100V

Kapacitans @ Vr, F : 10pF @ 4V, 1MHz

Monteringstyp : Surface Mount

Förpackning / fodral : DO-219AB

Leverantörs Device Package : Sub SMA

Driftstemperatur - Junction : -55°C ~ 150°C

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : RS1 , RS1B

dokument för RS1BLHM2G

Datablad : RS1BLHM2G.pdf

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