IPD180N10N3GBTMA1 - MOSFET N-CH 100V 43A TO252-3

Tillverkarens varunummer

IPD180N10N3GBTMA1

Intern artikelnummer

ABC-IPD180N10N3GBTMA1

Tillverkare

Infineon Technologies

Kort beskrivning

MOSFET N-CH 100V 43A TO252-3

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

1416982 Pieces

Referens pris

~~USD 0.231~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har IPD180N10N3GBTMA1 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för IPD180N10N3GBTMA1

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : IPD180N10N3GBTMA1

Tillverkare : Infineon Technologies

Beskrivning : MOSFET N-CH 100V 43A TO252-3

Serier : OptiMOS™

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 100V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 43A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 6V, 10V

Rds On (Max) @ Id, Vgs : 18 mOhm @ 33A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 33µA

Gate Laddning (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1800pF @ 50V

FET-funktionen : -

Effektdissipation (Max) : 71W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : PG-TO252-3

Förpackning / fodral : TO-252-3, DPak (2 Leads + Tab), SC-63

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : IPD18 , IPD180N1

dokument för IPD180N10N3GBTMA1

Datablad : IPD180N10N3GBTMA1.pdf

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