TK10A60W,S4VX - MOSFET N-CH 600V 9.7A TO-220SIS

Tillverkarens varunummer

TK10A60W,S4VX

Intern artikelnummer

ABC-TK10A60W,S4VX

Tillverkare

Toshiba Semiconductor and Storage

Kort beskrivning

MOSFET N-CH 600V 9.7A TO-220SIS

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

233793 Pieces

Referens pris

~~USD 1.4~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har TK10A60W,S4VX i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för TK10A60W,S4VX

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : TK10A60W,S4VX

Tillverkare : Toshiba Semiconductor and Storage

Beskrivning : MOSFET N-CH 600V 9.7A TO-220SIS

Serier : DTMOSIV

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 600V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 9.7A (Ta)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 380 mOhm @ 4.9A, 10V

Vgs (th) (Max) @ Id : 3.7V @ 500µA

Gate Laddning (Qg) (Max) @ Vgs : 20nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 700pF @ 300V

FET-funktionen : Super Junction

Effektdissipation (Max) : 30W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstyp : Through Hole

Leverantörs Device Package : TO-220SIS

Förpackning / fodral : TO-220-3 Full Pack

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : TK10 , TK10A6

dokument för TK10A60W,S4VX

Datablad : TK10A60W,S4VX.pdf

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