FZ1200R45KL3B5NOSA1 - MODULE IGBT A-IHV190-4

Tillverkarens varunummer

FZ1200R45KL3B5NOSA1

Intern artikelnummer

ABC-FZ1200R45KL3B5NOSA1

Tillverkare

Infineon Technologies

Kort beskrivning

MODULE IGBT A-IHV190-4

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

58955 Pieces

Referens pris

~~USD 1307.585~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har FZ1200R45KL3B5NOSA1 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för FZ1200R45KL3B5NOSA1

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : FZ1200R45KL3B5NOSA1

Tillverkare : Infineon Technologies

Beskrivning : MODULE IGBT A-IHV190-4

Serier : -

Delstatus : Active

IGBT-typ : -

Konfiguration : Single

Spänning - Samlare Emitter Breakdown (Max) : 4500V

Nuvarande - Samlare (Ic) (Max) : 1200A

Effekt - Max : 13500W

Vce (på) (Max) @ Vge, Ic : 2.85V @ 15V, 1200A

Nuvarande - Collector Cutoff (Max) : 5mA

Inputkapacitans (Cies) @ Vce : 280nF @ 25V

Inmatning : Standard

NTC-termistor : No

Driftstemperatur : -50°C ~ 125°C

Monteringstyp : Chassis Mount

Förpackning / fodral : Module

Leverantörs Device Package : Module

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : FZ1200 , FZ1200R45

dokument för FZ1200R45KL3B5NOSA1

Datablad : FZ1200R45KL3B5NOSA1.pdf

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