IPP076N12N3GXKSA1 - MOSFET N-CH 120V 100A TO220-3

Tillverkarens varunummer

IPP076N12N3GXKSA1

Intern artikelnummer

ABC-IPP076N12N3GXKSA1

Tillverkare

Infineon Technologies

Kort beskrivning

MOSFET N-CH 120V 100A TO220-3

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

210483 Pieces

Referens pris

~~USD 1.555~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har IPP076N12N3GXKSA1 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för IPP076N12N3GXKSA1

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : IPP076N12N3GXKSA1

Tillverkare : Infineon Technologies

Beskrivning : MOSFET N-CH 120V 100A TO220-3

Serier : OptiMOS™

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 120V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 100A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 7.6 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 4V @ 130µA

Gate Laddning (Qg) (Max) @ Vgs : 101nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 6640pF @ 60V

FET-funktionen : -

Effektdissipation (Max) : 188W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstyp : Through Hole

Leverantörs Device Package : PG-TO220-3

Förpackning / fodral : TO-220-3

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : IPP07 , IPP076N1

dokument för IPP076N12N3GXKSA1

Datablad : IPP076N12N3GXKSA1.pdf

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