NP80N055NDG-S18-AY - MOSFET N-CH 55V 80A TO-262

Tillverkarens varunummer

NP80N055NDG-S18-AY

Intern artikelnummer

ABC-NP80N055NDG-S18-AY

Tillverkare

Renesas Electronics America

Kort beskrivning

MOSFET N-CH 55V 80A TO-262

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

50752 Pieces

Referens pris

~~USD 0~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har NP80N055NDG-S18-AY i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för NP80N055NDG-S18-AY

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : NP80N055NDG-S18-AY

Tillverkare : Renesas Electronics America

Beskrivning : MOSFET N-CH 55V 80A TO-262

Serier : -

Delstatus : Obsolete

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 55V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 80A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 6.9 mOhm @ 40A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 135nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 6900pF @ 25V

FET-funktionen : -

Effektdissipation (Max) : 1.8W (Ta), 115W (Tc)

Driftstemperatur : 175°C (TJ)

Monteringstyp : Through Hole

Leverantörs Device Package : TO-262

Förpackning / fodral : TO-262-3 Long Leads, I²Pak, TO-262AA

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : NP80N0 , NP80N055N

dokument för NP80N055NDG-S18-AY

Datablad : NP80N055NDG-S18-AY.pdf

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