SIZ320DT-T1-GE3 - MOSFET 2N-CH 25V 30/40A 8POWER33

Tillverkarens varunummer

SIZ320DT-T1-GE3

Intern artikelnummer

ABC-SIZ320DT-T1-GE3

Tillverkare

Vishay Siliconix

Kort beskrivning

MOSFET 2N-CH 25V 30/40A 8POWER33

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

1717289 Pieces

Referens pris

~~USD 0.190605~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har SIZ320DT-T1-GE3 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för SIZ320DT-T1-GE3

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : SIZ320DT-T1-GE3

Tillverkare : Vishay Siliconix

Beskrivning : MOSFET 2N-CH 25V 30/40A 8POWER33

Serier : PowerPAIR®, TrenchFET®

Delstatus : Active

FET-typ : 2 N-Channel (Dual)

FET-funktionen : Standard

Avlopp till källspänning (Vdss) : 25V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 30A (Tc), 40A (Tc)

Rds On (Max) @ Id, Vgs : 8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.4V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 8.9nC @ 4.5V, 11.9nC @ 4.5V

Inputkapacitans (Ciss) (Max) @ Vds : 660pF @ 12.5V, 1370pF @ 12.5V

Effekt - Max : 16.7W, 31W

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Förpackning / fodral : 8-PowerWDFN

Leverantörs Device Package : 8-Power33 (3x3)

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : SIZ32 , SIZ320D

dokument för SIZ320DT-T1-GE3

Datablad : SIZ320DT-T1-GE3.pdf

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