SISH106DN-T1-GE3 - MOSFET N-CHAN PPAK 1212-8SH

Tillverkarens varunummer

SISH106DN-T1-GE3

Intern artikelnummer

ABC-SISH106DN-T1-GE3

Tillverkare

Vishay Siliconix

Kort beskrivning

MOSFET N-CHAN PPAK 1212-8SH

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

804776 Pieces

Referens pris

~~USD 0.40672~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har SISH106DN-T1-GE3 i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för SISH106DN-T1-GE3

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : SISH106DN-T1-GE3

Tillverkare : Vishay Siliconix

Beskrivning : MOSFET N-CHAN PPAK 1212-8SH

Serier : TrenchFET®

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 20V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 12.5A (Ta)

Drivspänning (Max Rds På, Min Rds På) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 6.2 mOhm @ 19.5A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 27nC @ 4.5V

Vgs (Max) : ±12V

Inputkapacitans (Ciss) (Max) @ Vds : -

FET-funktionen : -

Effektdissipation (Max) : 1.5W (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : PowerPAK® 1212-8SH

Förpackning / fodral : PowerPAK® 1212-8SH

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : SISH1 , SISH106D

dokument för SISH106DN-T1-GE3

Datablad : SISH106DN-T1-GE3.pdf

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